Low-threshold (Ga,In)(As,P) d.h. lasers emitting at 1.55 μm grown by l.p.e.

27 September 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (20) , 621-622
https://doi.org/10.1049/el:19790443

Abstract

Threshold current densities as low as 2.13 kA cm⁻² have been achieved in broad-contact double-heterostructure lasers with an emission wavelength of 1.55 μm. The three-layer structure was grown by liquid-phase epitaxy and contained a quaternary active layer 0.6 μm thick and a p-type quaternary upper confining layer with a bandgap of 1.05 eV. The normalised threshold current density was 3.5 kA cm⁻² μm⁻¹.

Keywords

(GA
IN)(AS
P) DH LASERS
P TYPE QUATERNARY LAYER
EMISSION WAVELENGTH
THRESHOLD CURRENT DENSITY
QUATERNARY ACTIVE LAYER
SEMICONDUCTOR FUNCTION DH LASERS
LPE