InGaAs/InP mesa photodetector passivated with silicon dioxide
- 25 October 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (22) , 919-920
- https://doi.org/10.1049/el:19840625
Abstract
A combination of mesa and planar techniques has enabled detectors of InGaAs on InP substrates to be masked during diffusion and later passivated by SiO2 films without degrading the dark current. Preliminary lifetests at 100°C are encouraging.Keywords
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