The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 253-256
• https://doi.org/10.4028/www.scientific.net/msf.338-342.253

Abstract

Keywords

• 3C-SIC
• APCVD
• APDS ANNIHILATION MECHANISM
• GROWTH MODE
• LPCVD
• SIMULATION