Limiting conditions of Si selective epitaxial growth in Si2H6 gas-source molecular beam epitaxy
- 30 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (14) , 1735-1736
- https://doi.org/10.1063/1.106234
Abstract
The limiting conditions are presented of selective epitaxial growth (SEG) on a SiO2‐patterned Si (001) substrate for Si gas‐source molecular‐beam epitaxy by use of 100% Si2H6. In the initial stage of growth, epitaxial Si was selectively grown on a Si surface in the wide temperature range of 500–850 °C. On the other hand, polycrystalline Si nucleation on a SiO2 surface was intimately related to the total volume of supply gas. At a substrate temperature of 700 °C and a Si2H6 flow rate of 60 sccm, a SEG layer could be deposited at a rate as high as 645 Å/min.Keywords
This publication has 4 references indexed in Scilit:
- Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2Journal of Applied Physics, 1989
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988
- Gas source silicon molecular beam epitaxy using silaneApplied Physics Letters, 1987
- Etching of SiO2 Films by Si in Ultra-High VacuumJapanese Journal of Applied Physics, 1982