Effects of deep impurities on n+p junction reverse-biased small-signal capacitance
- 31 March 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (3) , 323-334
- https://doi.org/10.1016/0038-1101(68)90044-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Tunable high-pass filter characteristics of a special MOS transistorIEEE Transactions on Electron Devices, 1965
- Double-injection experiments in semi-insulating silicon diodesSolid-State Electronics, 1965
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949