Electronic excitation of silane (SiH4) by low-energy electron impact

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Abstract
We report results of a study of the electronic excitation of silane by low‐energy electron impact, including cross sections from 10 to 40 eV impact energy for excitation of the first triplet and singlet excited states (2t 2→4sa 1)1,3 T 2. Our results are calculated using the Schwinger multichannel method as implemented for massively parallel computers and include a correction for high‐impact‐parameter excitation of the optically allowed 1 T 2 transition. We also report values of the total dissociation cross section derived from our calculations and total scattering measurements, and we compare these with direct measurements of the dissociation cross section.