Laser annealing of silicon on sapphire
- 1 August 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8) , 5536-5538
- https://doi.org/10.1063/1.326616
Abstract
Silicon‐implanted silicon‐on‐sapphire wafers have been annealed by 50‐ns pulses from a Q‐switched Nd : YAG laser. The samples have been analyzed by channeling and by ω‐scan x‐ray double diffraction. After irradiation with pulses of a fluence of about 5 J cm−2 the crystalline quality of the silicon layer is found to be better than in the as‐grown state.This publication has 6 references indexed in Scilit:
- Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layersApplied Physics Letters, 1979
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Electrochemical Reduction of Al2Cl7 − Ions in Chloroaluminate MeltsJournal of the Electrochemical Society, 1976
- Interface properties of Si on sapphire and spinelJournal of Vacuum Science and Technology, 1976
- Correlation of ion channeling and electron microscopy results in the evaluation of heteroepitaxial siliconJournal of Applied Physics, 1973
- Ion channeling studies of the crystalline perfection of epitaxial layersJournal of Applied Physics, 1973