High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

22 January 2004

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 40 (2) , 140-141
https://doi.org/10.1049/el:20040099

Abstract

Long reach C-band 10 Gbit/s uncooled operation of laser integrated to InGaAlAs electroabsorption modulator packages is presented. Using a design employing InGaAlsAs multi-quantum wells (MQW), uncooled operation over an 80°C temperature range, with modulated output power in excess of 0 dBm, 1.7 dB maximum change in extinction ratio, and with a dispersion penalty of 1 dB for 1600 ps/nm propagation is demonstrated.

Keywords

This publication has 2 references indexed in Scilit:

Laser integrated modulator module for uncooled, 10 Gbit/s 1550 nm long-reach data transmission
Electronics Letters, 2003
Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier
Electronics Letters, 2003