The breakdown voltage of double-sided p-n junctions
- 1 November 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (11) , 730-731
- https://doi.org/10.1109/T-ED.1974.18001
Abstract
The avalanche breakdown voltage of an abrupt double-sided junction is a function only of Neff(the doping obtained from capacitance-voltage analysis) in a material in which the ionization rates for electrons and holes are equal or maintain a constant ratio. This doping parameter, together with the published breakdown voltage data for single-sided junctions, immediately gives the breakdown voltage of the more complex structure.Keywords
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