Excimer laser mixing of nickel overlayers on silicon carbide
- 31 May 1985
- journal article
- Published by Elsevier in Materials Letters
- Vol. 3 (7-8) , 261-264
- https://doi.org/10.1016/0167-577x(85)90017-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Ion-beam and laser mixing of nickel overlayers on silicon carbideJournal of Applied Physics, 1984
- Microstructure analysis of Ni-SiC mixed layersMaterials Letters, 1984
- Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in siliconJournal of Applied Physics, 1980
- Laser Annealing of Ion-Implanted SemiconductorsScience, 1979
- p-n junction formation in boron-deposited silicon by laser-induced diffusionApplied Physics Letters, 1978