Sensitivity of the photorefractive processes
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 18 (1) , 153-159
- https://doi.org/10.1080/00150197808236812
Abstract
Sensitivity of the different known photoiefractive processes are computed from experimental datas, and compared to an ideal non dissipative process. The minimum absorbed light energy for a change in birefringence of 10-5 in LiNbO3 is found to be Wm-m # 20 mJ/cm3. The real photorefractive processes are shown to be less sensitive by one order of magnitude, excepted the process assisted by photoconductivity, which reaches the photographic sensitivity.Keywords
This publication has 30 references indexed in Scilit:
- High-sensitivity read-write volume holographic storage in Bi12SiO20 and Bi12GeO20 crystalsApplied Physics Letters, 1976
- Holographic storage and photoconductivity in PLZT ceramic materialsApplied Optics, 1976
- Optical damage in transition-metal-doped LiTaO3Journal of Applied Physics, 1975
- Excited state polarization, bulk photovoltaic effect and the photorefractive effect in electrically polarized mediaJournal of Electronic Materials, 1975
- The photoferroelectric mechanism of the effect of “optical damage” in strontium barium niobate crystalsPhysica Status Solidi (a), 1975
- Optically Induced Refractive Index Changes in BaTiO3Journal of Applied Physics, 1970
- ELECTRICAL CONTROL OF HOLOGRAPHIC STORAGE IN STRONTIUM-BARIUM NIOBATEApplied Physics Letters, 1969
- Optically Induced Change of Refractive Indices in LiNbO3 and LiTaO3Journal of Applied Physics, 1969
- Laser induced refractive index inhomogeneities and absorption saturation effects in CdSIEEE Journal of Quantum Electronics, 1967
- OPTICALLY-INDUCED REFRACTIVE INDEX INHOMOGENEITIES IN LiNbO3 AND LiTaO3Applied Physics Letters, 1966