Deep levels in ion-implanted, CW laser-annealed silicon

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Abstract
Electronic defect levels in self‐implanted, CW Ar‐laser‐annealing silicon have been measured by deep‐level transient spectroscopy. Results are presented from measurements on n‐type Schottky diodes which were fabricated on both Czochralskigrown an epitaxial silicon wafers. High densities of electron traps remain after CW laser‐induced recrystallization of an implanted amorphous layer. The defect densities decrease with depth into the silicon substrate. The residual damage is only partially decrease with depth into the silicon substrate. The residual damage is only partially removed by a 600‐C anneal and is substantially removed after an 800‐C anneal.

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