Germanium and silicon transistor structures by the diffused-meltback process employing two or three impurities
- 1 July 1958
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 5 (3) , 121-126
- https://doi.org/10.1109/T-ED.1958.14406
Abstract
The diffused-meltback process for making transistor structures involves growing a crystal containing a donor and an acceptor impurity, cutting the crystal into pellets, melting and refreezing part of a pellet, and then diffusing. Two impurities may be used to produce high-frequency silicon structures. For best results with germanium, three impurities are required for practical reasons. The two and three-impurity cases are analyzed, and illustrated by graphs and numerical examples. Some characteristic transistor parameters are given to show the applicability of the diffused-meltback process for high-frequency devices.Keywords
This publication has 3 references indexed in Scilit:
- Fabrication of Multiple Junctions in Semiconductors by Surface Melt and Diffusion in the Solid StateJournal of Applied Physics, 1957
- Quenched-In Recombination Centers in SiliconPhysical Review B, 1956
- Restoration of Resistivity and Lifetime in Heat Treated GermaniumJournal of Applied Physics, 1955