Liquid phase epitaxy of CdxHg1−xTe(0.5 < x < 1) and phase diagram determination
- 2 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (3) , 503-509
- https://doi.org/10.1016/0022-0248(87)90483-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- LPE growth and characterization of 1.3 μm (Hg, Cd)Te layersJournal of Crystal Growth, 1985
- LPE growth of Hg1−xCdxTe on Cd1−yZnyTe substratesJournal of Crystal Growth, 1985
- Liquid phase epitaxy of Hg1−xCdxCdxTeJournal of Crystal Growth, 1982
- Slider LPE of Hg1-xCdxTe using mercury pressure controlled growth solutionsJournal of Electronic Materials, 1981
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980
- Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniquesJournal of Electronic Materials, 1980
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- Optically pumped LPE-grown Hg1−xCdxTe lasersJournal of Electronic Materials, 1979
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Phase equilibria in the system Cd—Te∗Journal of Physics and Chemistry of Solids, 1962