Low-temperature diffusion of silver in InP

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Abstract
A series of experiments is described in which radioactive silver was diffused into the III-V semiconductor InP. Diffusion profiles were determined at 250 degrees C, 420 degrees C and 550 degrees C over a range of ambient phosphorus pressures. The solubility data suggest that the silver atoms sit on phosphorus sites in the crystal, although it is also possible to interpret the results in terms of the silver occurring in an atom-vacancy complex. The general shape of the diffusion profiles is consistent with the operation of a substitutional-interstitial type of diffusion mechanism. Analysis of the curves permits an estimate of 1015-1016 cm-3 to be made for the phosphorus vacancy concentration at 550 degrees C. The diffusion coefficient of the vacancies at that temperature can also be estimated at 10-9-10-10 cm2 s-1.

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