Impact ionization of deep impurities in zinc selenide

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Abstract
Multiplication measurements, in which the photocurrent in a Schottky diode is measured as a function of electric field, have been used to obtain information on impact processes at deep impurities in ZnSe. For ZnSe:Mn one sees multiplication governed by impact transfer of electrons from the impurity to the conduction band. At higher fields, band-to-band impact ionization occurs. For ZnSe:Cu, the impurity concentration is not high enough for one to see a contribution to the multiplication from impact ionization. A theory of the multiplication as a function of field is presented and shown to be in agreement with the ZnSe:Mn data.