The probability for ballistic electron motion in n-GaAs

1 July 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (7) , 167-169
https://doi.org/10.1109/EDL.1981.25385

Abstract

By choosing the value of P = e+1as a probability criterion, ballistic electron motion in n-GaAs devices is investigated. The scattering processes due to optical phonons, intervalley phonons of Γ &rarr L and Γ → X and acoustic phonons are included in the calculations. The relation between the length of the active region and the applied voltage at 77°K and 300°K is discussed. This provides a guide to ballistic electron device design.

Keywords

OPTICAL SCATTERING
ACOUSTIC SCATTERING
PHONONS
ELECTRON OPTICS
ACCELERATION
TEMPERATURE DEPENDENCE
POISSON EQUATIONS
HIGH SPEED OPTICAL TECHNIQUES
ACOUSTIC DEVICES
VOLTAGE

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