Measurements of multiplication effects on noise in silicon avalanche diodes
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 56 (11) , 2051-2052
- https://doi.org/10.1109/PROC.1968.6783
Abstract
Fine grain measurements of avalanche multiplication and noise in large area uniform silicon avalanche diodes are discussed. A high resolution apparatus is described which is capable of resolving multiplication noise in regions separated by only 10-4inches (∼2.5 microns) and recording this noise as a function of position over the entire diode area.Keywords
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