I n s i t u electron spectroscopy study of Si surfaces after Ar-ion-assisted Cl2 etching

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Abstract
Si surfaces after Ar‐ion‐assisted Cl2 etching are studied with in situ observation methods. Low‐energy electron energy loss spectroscopy (LEELS), x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and reflection high‐energy electron diffraction are employed for the analysis. Different primary electron energies are used on LEELS measurements to vary the probing depth from approximately 2 to 7 Å. Etched surfaces show two conspicuous LEELS peaks that present different depth profiles. One of these peaks is related to SiCl3‐type surface reaction products detected with XPS, while the other peak is related to SiCl‐type surface reaction products. The SiCl3‐type reaction products exist at more superficial regions than those of the SiCl type. An amorphous reaction‐product layer is formed through ion mixing on Cl‐adsorbed Si surfaces by simultaneous supply of Cl2 molecules and an Ar‐ion beam. The results of this study provide new information for the understanding of the Si dry‐etching mechanism.