Symmetric separate confinement heterostructure lasers with low threshold and narrow beam divergence by m.b.e.

4 December 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (25-26) , 939-941
https://doi.org/10.1049/el:19800669

Abstract

By optimising the layer structure in a symmetric separate confinement heterostructure laser, and by using molecular beam epitaxy to grow the very thin active layer (~500 Å) needed, very low current threshold densities of ~600 Å/cm² without reflectance mirror coatings and very stable narrow beam divergence of θ_⟂~30° and θ_∥~4° were reproducibly obtained.

Keywords

600 A/CM2
SYMMETRIC SEPARATE CONFINEMENT HETEROSTRUCTURE LASER
MOLECULAR BEAM EPITAXIAL GROWTH
LOW CURRENT THRESHOLD DENSITIES
LAYER STRUCTURE
STABLE NARROW BEAM DIVERGENCE
SEMICONDUCTOR JUNCTION LASERS

This publication has 1 reference indexed in Scilit:

HETEROSTRUCTURE MATERIALS
Published by Elsevier ,1978