The isoelectronic centre in beryllium-doped silicon. I. Zeeman study
- 20 October 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (29) , 6067-6085
- https://doi.org/10.1088/0022-3719/15/29/018
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Optically-detected-magnetic-resonance investigation of triplet-exciton recombination at 1.91 eV in GaP:CuPhysical Review B, 1981
- Evidence for the existence of a complex isoelectronic center in Si : InJournal of Luminescence, 1980
- The 1.045 eV vibronic band in silicon doped with lithiumJournal of Physics C: Solid State Physics, 1980
- Unified theory of symmetry-breaking effects on excitons in cubic and wurtzite structuresPhysical Review B, 1976
- Theory of isoelectronic trapsJournal of Luminescence, 1973
- Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal SiliconPhysical Review B, 1972
- The optical properties of Be, Mg and Zn-diffused gallium phosphideJournal of Luminescence, 1971
- Isoelectronic Trap Li-Li-O in GaPPhysical Review B, 1971
- Zeeman Effect and Crystal-Field Splitting of Excitons Bound to Isoelectronic Bismuth in Gallium PhosphidePhysical Review B, 1969
- Paramagnetic Resonance Absorption from Acceptors in SiliconPhysical Review Letters, 1960