Electronic densities of states of bimetallic superlattices with interfacial diffusion
- 15 January 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (2) , 873-878
- https://doi.org/10.1103/physrevb.31.873
Abstract
The density of states at each layer of a bimetallic superlattice is calculated by expansion of the Green’s function in a continued fraction. We use a three-dimensional tight-binding model system, with three atomic layers of each type of atom, and study the effect of a small amount of interfacial diffusion. We find that a small proportion of randomly located atoms of the wrong kind in an interfacial layer changes the local density of states considerably, and that this effect is also appreciable in the total density of states for the superlattice, obtained by averaging adequately the local densities of states.Keywords
This publication has 9 references indexed in Scilit:
- Model calculations of local electron and phonon densities of states in bimetallic superlatticesPhysical Review B, 1983
- Compositional and doping superlattices in III-V semiconductorsAdvances in Physics, 1983
- Localization in a three-dimensional metalPhysical Review B, 1982
- Generalization of the coherent-potential approximation to compositionally modulated alloysPhysical Review B, 1982
- Band gaps and asymptotic behaviour of continued fraction coefficientsJournal of Physics C: Solid State Physics, 1982
- Electronic Structure and Magnetism of CuNi Coherent Modulated StructuresPhysical Review Letters, 1980
- Enhanced elastic modulus in composition-modulated gold-nickel and copper-palladium foilsJournal of Applied Physics, 1977
- Density of states of disordered systems by the continued-fraction method. IIIJournal of Physics C: Solid State Physics, 1977
- Electronic structure based on the local atomic environment for tight-binding bandsJournal of Physics C: Solid State Physics, 1972