Damage and lattice location studies in high-temperature ion-implanted diamond
- 15 March 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (6) , 416-418
- https://doi.org/10.1063/1.92400
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Radiation damage and annealing in Sb implanted diamondRadiation Effects, 1980
- Intrinsic limitations of doping diamonds by heavy-ion implantationJournal of Applied Physics, 1979
- Ion implantation into diamondRadiation Effects, 1978
- Lattice location of low-Z impurities in medium-Z targets using ion-induced x rays. I. Analytical techniqueJournal of Applied Physics, 1974
- Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ionsCanadian Journal of Physics, 1968