Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures
- 1 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 439-442
- https://doi.org/10.1016/0167-9317(95)00282-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Fracture of GaAs WafersJapanese Journal of Applied Physics, 1988
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987