Measurement of the Lifetime of Minority Carriers in Semiconductors with a Scanning Electron Microscope
- 1 April 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (4) , 316-317
- https://doi.org/10.1143/jjap.4.316
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Conductivity Mobilities of Electrons and Holes in Heavily Doped SiliconPhysical Review B, 1957
- Growth of Germanium Single Crystals ContainingJunctionsPhysical Review B, 1951