Symmetry determination of surface states on GaAs (110) using polarization-dependent, angle-resolved photoemission

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Abstract
New occupied surface states are observed on the (110) cleavage face of GaAs. Using the polarized character of the radiation at the Wisconsin Synchrotron Radiation Center the symmetry of the states in the mirror plane are determined. Among current calculations of the electronic structure, only that which includes bond length relaxation yields results that are consistent with the observations.