Features of SiC single-crystals grown in vacuum using the LETI method
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 77-81
- https://doi.org/10.1016/s0921-5107(98)00449-8
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Growth of SiC ingots with high rateaMaterials Science and Engineering: B, 1997