Avalanche photodiodes with a gain-bandwidth product of more than 200 GHz
- 15 May 1975
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (10) , 585-587
- https://doi.org/10.1063/1.87985
Abstract
The design and characteristics of avalanche photodiodes with a gain‐bandwidth product in the range of 250 GHz are reported. The planar front‐illuminated silicon diodes are of the n+‐p‐π‐p+ reach‐through type.Keywords
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