Extended states in finite one-dimensional, disordered, highly doped, ItransR-polyacetylene chains

Abstract
In this work we calculate the density of states for long finite one-dimensional ItransR-polyacetylene chains with a disordered distribution of solitonlike defects. The theoretical model adopted is a combination of the negative-factor-counting technique and Austin method 1 calculations. Our results show the presence of extended (conducting) states at the Fermi level that could explain the semiconductor-metal transition for highly doped ItransR-polyacetylene, in accord with the experimentally observed infrared-active vibrational modes.