High-frequency admittance of high-electron-mobility transistors (HEMTs)
- 31 August 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (8) , 753-754
- https://doi.org/10.1016/0038-1101(83)90036-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-frequency admittance of high-electron-mobility transistors (HEMTs)Solid-State Electronics, 1983
- Induced-gate thermal noise in high electron mobility transistorsSolid-State Electronics, 1983
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982
- Calculation of high-frequency characteristics of field-effect transistorsSolid-State Electronics, 1965
- Calculation of high-frequency characteristics of thin-film transistorsSolid-State Electronics, 1965
- Small-signal, high-frequency theory of field-effect transistorsIEEE Transactions on Electron Devices, 1964