Abstract
A remarkable improvement of external efficiency is achieved in double-heterojunction GaAs-GaAlAs superluminescent diodes (d.h. s.l.d.s) by application of antireflective coatings on the front face. The external differential quantum efficiency of 750–1500 μm long s.l.d.s increased from 1.2% to 4.5% (n.a.=0.7) after coating the front face with a quarter-wavelength silicon-monoxide film.

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