High-efficiency X-band GaAs IMPATT diodes
- 1 November 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 15 (11) , 938-939
- https://doi.org/10.1109/t-ed.1968.16538
Abstract
Epitaxial GaAs diodes have been fabricated giving 651mW CW output power at 10 GHz under room temperature operation. A dc to RF efficiency of 10.1 percent was obtained from a diode operating CW while the measured output of another diode was over 20 mW for 3 mA dc with 70-volt biasing.Keywords
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