METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES

1 May 1971

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 18 (9) , 401-403
https://doi.org/10.1063/1.1653717

Abstract

Admittance measurements of MOS structures with oxide layers 20 to 40 Å thick have been made to determine interface‐state distributions for various metal contacts. These distributions for Au, Cr, Cu, and Mg, exhibiting comparatively sharp characteristic peaks, increase rapidly with decreasing oxide thickness and sample annealing, thus indicating a strong influence of metal diffusion through the oxide on interface‐state formation.

Keywords

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