Half-micrometre-base lateral bipolar transistors made in thin silicon-on-insulator films

14 August 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (17) , 886-887
https://doi.org/10.1049/el:19860604

Abstract

NPN and PNP lateral bipolar transistors having a base length shorter than 0.5 μm have been made in thin (100 nm) silicon-on-insulator films. Current gains of 75 and 40 have been obtained in NPN and PNP devices, respectively. Measurements indicate a base generation lifetime of 1 μs, and leakage currents of a fraction of a picoampere have been measured. The device fabrication is compatible with an SOI CMOS fabrication process.

Keywords

SOI TECHNOLOGY
N P N
BASE GENERATION LIFETIME
P N P
BASE LENGTH
LATERAL BIPOLAR TRANSISTORS
LEAKAGE CURRENTS
DEVICE FABRICATION

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