Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystals
- 9 August 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (8) , 1396-1398
- https://doi.org/10.1063/1.1502195
Abstract
We discuss applicability of the variable stripe length method to experimental investigation of optical gain in a luminescent layer that behaves like a planar waveguide. We show that an interplay between the output direction of guided light modes and the numerical aperture of the collection optics may lead to an artifact manifesting itself as an apparent but false gain. We propose a way to circumvent this inconvenience by using a “shifting excitation spot” complementary measurement. The method is demonstrated on a layer of Si nanocrystals embedded into a synthetic silica plate.Keywords
This publication has 9 references indexed in Scilit:
- Optical absorption measurements of silica containing Si nanocrystals produced by ion implantation and thermal annealingApplied Physics Letters, 2002
- Photoluminescence spectroscopy of single silicon quantum dotsApplied Physics Letters, 2002
- Optical gain in Si/SiO2 lattice: Experimental evidence with nanosecond pulsesApplied Physics Letters, 2001
- Stimulated blue emission in reconstituted films of ultrasmall silicon nanoparticlesApplied Physics Letters, 2001
- Optical gain in silicon nanocrystalsNature, 2000
- Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2Journal of Applied Physics, 1999
- Determination of single-pass optical gain and internal loss using a multisection deviceApplied Physics Letters, 1999
- Characterization of Si+ ion-implanted SiO2 films and silica glassesJournal of Applied Physics, 1998
- Stimulated Emission from the Excitonic Molecules in CuClPhysical Review Letters, 1971