Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution

1 August 1992

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 31 (8R)
https://doi.org/10.1143/jjap.31.2338

Abstract

Variation in the surface concentration of Fe, Ni, Cu and Zn on Si wafers due to treatment in NH₄OH/H₂O₂/H₂O solution is investigated. It is shown that adsorption and desorption of the metallic impurities occur simultaneously in the solution. The metal concentration on the wafer surface depends on the initial surface concentration, concentration in the solution, adsorption probability, desorption rate constant and the treatment time. The measured surface concentration is explained by taking into account the effects of these parameters. The variation in the desorption rate constant with the metal species, treatment temperature and the concentration in the solution is discussed.

Keywords

This publication has 2 references indexed in Scilit:

Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
Japanese Journal of Applied Physics, 1992
Particle-free wafer cleaning and drying technology
IEEE Transactions on Semiconductor Manufacturing, 1989