OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5
- 1 March 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (2) , 79-85
- https://doi.org/10.1007/bf02649907
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- AlxGa1−xAsySb1−y phase diagramJournal of Crystal Growth, 1983
- Liquid phase epitaxy of unstable alloys: Substrate-induced stabilization and connected effectsJournal of Vacuum Science & Technology B, 1983
- Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substratesJournal of Crystal Growth, 1982
- EpitaxyReports on Progress in Physics, 1982
- Electrical and Optical Studies in Gallium AntimonideJapanese Journal of Applied Physics, 1981
- The GaAlAsSb quaternary and GaAlSb ternary alloys and their application to infrared detectorsIEEE Journal of Quantum Electronics, 1981
- GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Epitaxial Vapor Growth of Gallium AntimonideJapanese Journal of Applied Physics, 1970
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968