A fast-opening switch for use in REB diode experiments
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (3) , 1004-1006
- https://doi.org/10.1063/1.323797
Abstract
The operating characteristics of a plasma‐filled fast‐opening switch and its performance in pinching experiments on Sandia’s Proto I accelerator (double sided, 2 MV, 7.2 Ω, 24 nsec each side) are described. The growth of a sheath between the plasma and the cathode of the switch is the mechanism responsible for the switch impedance rising from 0.1 to 50 Ω in 10 nsec. The effect of this switch on diode prepulse and machine turn‐on transient suppression is discussed.This publication has 6 references indexed in Scilit:
- Electron Beam Generation in Plasma-Filled DiodesPhysical Review Letters, 1975
- Harp, A Short Pulse, High Current Electron Beam AcceleratorIEEE Transactions on Nuclear Science, 1975
- Ion effects in relativistic diodesApplied Physics Letters, 1975
- Conical Z-Pinch GunJournal of Applied Physics, 1971
- Theory and numerical solutions for sheath growth in a low-pressure plasmaJournal of Plasma Physics, 1971
- Theory of a thick dynamic positive-ion sheathJournal of Plasma Physics, 1969