Quantitative analysis of deuterium implanted in crystalline silicon and pyrolytic graphite by pulsed XeCl laser desorption

1 March 1992

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 10 (2) , 368-373
https://doi.org/10.1116/1.578058

Abstract

We have investigated the pulsed XeCl laser induced thermal desorption of deuterium implanted in crystalline silicon (c-Si) and highly oriented pyrolytic graphite (HOPG). Calibrations and experimental procedures for the quantitative analysis of deuterium are described. The desorption thresholds are 0.55±0.09 and 0.43±0.07 J/cm2 for c-Si and c-axis HOPG, respectively. However, for a-axis HOPG, deuterium is difficult to desorb because of the higher thermal conductivity. As a desorption product from HOPG, CD4 has also been observed. The deuterium evolution in both c-Si and c-axis HOPG has been modeled with the code dtrlas. It appears to be mainly limited by the detrapping processes with the effective activation energies, EB= 1.2 ± 0.3 eV and EB = 2.35 ± 0.55 eV for c-Si and c-axis HOPG, respectively.

Keywords

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