Electrostatic probe measurements for microwave plasma-assisted chemical vapor deposition of diamond
- 23 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (26) , 3387-3389
- https://doi.org/10.1063/1.105683
Abstract
The electron energy and density in a diamond microwave plasma-assisted chemical vapor deposition reactor are determined using a double-electrostatic-probe technique. For a reactor feed gas composition of 2% CH4, 1% O2 in H2, electron temperatures of 6 eV and electron densities of ∼1.0×1011 cm−3 were measured. These values are consistent with optical emission spectroscopic results. The electron temperature is not strongly dependent on the amount of O2 added to the reactor feed mixture, indicating that the plasma essentially retains the energetic parameters of a hydrogen plasma.Keywords
This publication has 13 references indexed in Scilit:
- Examination of the chemistry involved in microwave plasma assisted chemical vapor deposition of diamondJournal of Materials Research, 1991
- Characterization of microwave plasma CVD of diamond by mass analysis and optical emission spectroscopyProceedings of SPIE, 1990
- Cross Sections and Related Data for Electron Collisions with Hydrogen Molecules and Molecular IonsJournal of Physical and Chemical Reference Data, 1990
- Current Issues and Problems in the Chemical Vapor Deposition of DiamondScience, 1990
- Characterization of diamond films by thermogravimetric analysis and infrared spectroscopyMaterials Research Bulletin, 1989
- Diamond—Ceramic Coating of the FutureJournal of the American Ceramic Society, 1989
- Low-Pressure, Metastable Growth of Diamond and "Diamondlike" PhasesScience, 1988
- Plasma diagnostics with electric probesJournal of Vacuum Science and Technology, 1978
- Dissociation of Molecular Hydrogen by Electron ImpactThe Journal of Chemical Physics, 1965
- A Floating Double Probe Method for Measurements in Gas DischargesPhysical Review B, 1950