Efficient silicon light-emitting diodes
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- 1 August 2001
- journal article
- Published by Springer Nature in Nature
- Vol. 412 (6849) , 805-808
- https://doi.org/10.1038/35090539
Abstract
Considerable effort is being expended on the development of efficient silicon light-emitting devices compatible with silicon-based integrated circuit technology. Although several approaches are being explored, all presently suffer from low emission efficiencies, with values in the 0.01-0.1% range regarded as high. Here we report a large increase in silicon light-emitting diode power conversion efficiency to values above 1% near room temperature-close to the values of representative direct bandgap emitters of a little more than a decade ago. Our devices are based on normally weak one- and two-phonon assisted sub-bandgap light-emission processes. Their design takes advantage of the reciprocity between light absorption and emission by maximizing absorption at relevant sub-bandgap wavelengths while reducing the scope for parasitic non-radiative recombination within the diode. Each feature individually is shown to improve the emission efficiency by a factor of ten, which accounts for the improvement by a factor of one hundred on the efficiency of baseline devices.Keywords
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