Phase transformations of amorphous gasb-ge alloy at high pressures

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Abstract
Phase transformations occuring in the initially amorphous bulk (GaSb)38Ge24 semiconductor at pressures to 7.7 GPa and temperatures to 330°C were studied using the measurement of the electrical resistance supplemented by the X-ray examination of the samples quenched to 100 K after a high pressure treatment. The obtained experimental data and model calculations were then used to construct the T-P diagram of metastable equilibria between the crystalline metallic high-pressure phase (hpp) and two unordered phases, semiconducting (sup) and metallic (mup), which are either amorphous or liquid depending on the temperature. The line of the hpp↔mup equilibrium (the melting curve of the high-pressure phase) was shown to terminate at a critical point where the mup becomes thermodynamically unstable as a phase. The line of the hpp↔sup equilibrium conditions the effect of solid state amorphization of the high-pressure phase at decreasing pressure.