Growth of β-SiC film on Si substrate by surface reaction using hydrocarbon gas and Si molecular beams in ultrahigh vacuum

Abstract
The growth of β-SiC on Si(111) substrate was performed with a two-step growth method in a molecular-beam epitaxy (MBE) system using a C2H2 gas source and a Si solid source: an initial optimal carbonization process followed by MBE. The properties of SiC film were analyzed with in situ Auger electron spectroscopy, reflection high-energy electron diffraction, and x-ray photoemission spectroscopy and with ex situ Fourier transform infrared and ellipsometry. In the surface carbonization, the reacted surface showed a change from the β-SiC structure to a carbon-absorbed SiC structure with the increase in carbonization time. A carbonization time of 10 min, a substrate temperature of 875 °C, and a growth pressure of 1.6×10−6 Torr were found to be optimal for the surface carbonization. The growth of SiC was conducted at 900 °C for 30 min with a 0.8 Å/s Si beam flux and a 1.6×10−6 Torr of growth pressure and the films obtained showed single crystalline β-SiC. However, thick films obtained with high growth rates showed polycrystalline structures.

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