Chemical State Depth Profile for GaAs Surface
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L15
- https://doi.org/10.1143/jjap.23.l15
Abstract
Angular dependent core-level X-ray photoelectron spectra measurement has been performed for native oxide of single crystal GaAs wafer and proved to be a useful method for obtaining chemical state depth profile near the surface. Metallic arsenic is buried in a growing native oxide layer and stranded at the interface layer of oxide and GaAs substrate.Keywords
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