Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates
- 13 May 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (19) , 2090-2092
- https://doi.org/10.1063/1.105020
Abstract
The lateral variation of the emission energy of GaAs masklessly grown on V‐grooved Si is imaged with cathodoluminescence wavelength imaging. This newly developed unique experimental approach allows, for the first time, to directly visualize and quantify the extreme homogeneity of this novel growth mode and the lateral variation of Si impurity incorporation in such semiconductor microstructures. It represents an essential characterization tool for micropatterned optoelectronic monolithic integrated circuits.Keywords
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