Displaced-Maxwellian transport calculation for InP and InAs0.2P0.8
- 28 June 1971
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 35 (5) , 365-366
- https://doi.org/10.1016/0375-9601(71)90739-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Measurements on dipole domains in indium phosphidePhysics Letters A, 1971
- Performance of InP 3-level oscillators in K and Q bands: 18–40 GHzElectronics Letters, 1971
- Observation of high-field domains in n type indium phosphideElectronics Letters, 1971
- Frequency limitations of 3-level oscillatorsElectronics Letters, 1970
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- On Mechanism of Electron Scattering in InPPhysica Status Solidi (b), 1970
- Location of theandMinima in GaAs as Determined by Photoemission StudiesPhysical Review B, 1968
- Electron mobility of indium arsenide phosphide [In(AsyP1−y)]Journal of Physics and Chemistry of Solids, 1959