Hall effect measurements in SnOx film sensors exposed to reducing and oxidizing gases
- 1 December 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 193-194, 935-942
- https://doi.org/10.1016/0040-6090(90)90247-b
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Theoretical description of gas-film interaction on SnOxThin Solid Films, 1988
- Transparent conductors—A status reviewThin Solid Films, 1983
- Semiconductor gas sensorsSensors and Actuators, 1981
- The Hall effect in polycrystalline and powdered semiconductorsReports on Progress in Physics, 1980
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- The heterodiode chemical sensorThin Solid Films, 1975
- Defect structure and electronic donor levels in stannic oxide crystalsJournal of Applied Physics, 1973
- Electrical Properties of High-Quality Stannic Oxide CrystalsJournal of Applied Physics, 1971
- Heterojunction properties of the oxidised semiconductorSolid-State Electronics, 1965
- Theory of Photoconductivity in Semiconductor FilmsPhysical Review B, 1956