The Characterization of Electron Cyclotron Resonance Plasma Deposited Silicon Nitride and Silicon Oxide Films

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Abstract
The physical and bonding properties of electron cyclotron resonance (ECR) plasma‐deposited silicon nitride and oxide films deposited in many commercial ECR deposition systems were analyzed using various analytical techniques. ECR films deposited at room temperature showed better qualities than those of plasma‐deposited films at higher temperature (350°C). The oxide film qualities are almost comparable to thermal CVD films. However, the nitride film qualities are slightly poorer. For both films, the step coverage is very nonconformal, and sidewall films are much more porous under most deposition conditions. This is due to the anisotropic ion bombardment properties of ECR processing. RF biasing can reduce this effect, fill shallow trenches and planarize the surface structure with appropriate processing conditions.

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