Methyl exchange reaction of trimethylindium on GaAs(100) and the preferential etching of gallium
- 2 September 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 235 (2-3) , L333-L337
- https://doi.org/10.1016/0039-6028(90)90783-5
Abstract
No abstract availableKeywords
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