Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation
- 1 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 11 (1-4) , 69-71
- https://doi.org/10.1016/0921-5107(92)90193-d
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- C-V characteristics of SiC metal-oxide-semiconductor diode with a thermally grown SiO2 layerApplied Physics Letters, 1981
- Die bevorzugte Ausbildung der kubisch dichtesten Kugelpackung bei ungerichteten Bindungen zwischen erstnächsten GitternachbarnZeitschrift für Physikalische Chemie, 1967